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SKM 2023 – scientific programme

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HL: Fachverband Halbleiterphysik

HL 44: Nitrides: Devices

Thursday, March 30, 2023, 15:00–17:00, POT 112

15:00 HL 44.1 Highly doped GaN:Ge/GaN:Mg tunnel junctions for novel GaN-based optoelectronic devices — •Christoph Berger, Armin Dadgar, and André Strittmatter
15:15 HL 44.2 Mitigating damage induced by strongly ionising radiation in nitride layered structures — •Miguel C. Sequeira, Mamour Sall, Flyura Djurabekova, Kai Nordlund, Isabelle Monnet, Clara Grygiel, Christian Wetzel, and Katharina Lorenz
15:30 HL 44.3 A guide on designing high performance porous GaN DBRs — •Matthias Hoormann, Frederik Lüßmann, Florian Meierhofer, Jana Hartmann, and Andreas Waag
15:45 HL 44.4 PL enhancement from Mie resonant silicon-rich-nitride nano-disks — •Krishna Koundinya Upadhyayula and Jörg Schilling
  16:00 15 min. break
16:15 HL 44.5 UVC-LEDs grown on HTA-AlN templates with low dislocation densities and high Si doping for strain management — •Tim Mampe, Sarina Graupeter, Giulia Cardinali, Sylvia Hagedorn, Tim Wernicke, Markus Weyers, and Michael Kneissl
16:30 HL 44.6 Intensity fluctuations of infrared and green photodiodes at constant current and its correlation with voltage fluctuations — •Danylo Bohomolov and Ulrich T. Schwarz
16:45 HL 44.7 Theoretical improvement of 40% in efficiency of AlGaN UV LED using evolution strategies optimization algorithm — •Lucie Leguay and Andrei Schliwa
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