SKM 2023 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 44: Nitrides: Devices
HL 44.3: Vortrag
Donnerstag, 30. März 2023, 15:30–15:45, POT 112
A guide on designing high performance porous GaN DBRs — •Matthias Hoormann1,2, Frederik Lüßmann1,2, Florian Meierhofer1,2, Jana Hartmann1,2, and Andreas Waag1,2 — 1Institute of Semiconductor Technology, Technische Universität Braunschweig, Hans-Sommer-Str. 66, 38106 Braunschweig, Germany — 2Laboratory for Emerging Nanometrology (LENA), Technische Universität Braunschweig, Langer Kamp 6, 38106 Braunschweig, Germany
Recently, porous GaN etching has gained significant attention, due to its broad variety of convenient applications for optoelectronic devices. Specifically, the introduction of nanoporous layers enables the quasi-epitaxial growth of low refractive index GaN-based compounds for applications such as vertical DBR mirror structures.
Whilst classical DBRs are designed in order to satisfy the quarter-wavelength-condition, porous GaN DBRs are subject to a competition between porosity and optimal constructive interference from the layer thicknesses. It is vital to understand the influence of the porosity, as deviations from typical DBR designs might be advantageous for the device performance as inferred from simulations.
In this contribution, we investigate the influence of different designs and etching parameters on the optical performance of a defined layer structure. Particularly, the interdependency between the etched porosity and the design porosity with respect to the optical device performance is investigated. To determine the porosity, a combination of optical measurements, simulations and a gravimetric approach is used.