SKM 2023 –
wissenschaftliches Programm
HL 44: Nitrides: Devices
Donnerstag, 30. März 2023, 15:00–17:00, POT 112
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15:00 |
HL 44.1 |
Highly doped GaN:Ge/GaN:Mg tunnel junctions for novel GaN-based optoelectronic devices — •Christoph Berger, Armin Dadgar, and André Strittmatter
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15:15 |
HL 44.2 |
Mitigating damage induced by strongly ionising radiation in nitride layered structures — •Miguel C. Sequeira, Mamour Sall, Flyura Djurabekova, Kai Nordlund, Isabelle Monnet, Clara Grygiel, Christian Wetzel, and Katharina Lorenz
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15:30 |
HL 44.3 |
A guide on designing high performance porous GaN DBRs — •Matthias Hoormann, Frederik Lüßmann, Florian Meierhofer, Jana Hartmann, and Andreas Waag
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15:45 |
HL 44.4 |
PL enhancement from Mie resonant silicon-rich-nitride nano-disks — •Krishna Koundinya Upadhyayula and Jörg Schilling
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16:00 |
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15 min. break
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16:15 |
HL 44.5 |
UVC-LEDs grown on HTA-AlN templates with low dislocation densities and high Si doping for strain management — •Tim Mampe, Sarina Graupeter, Giulia Cardinali, Sylvia Hagedorn, Tim Wernicke, Markus Weyers, and Michael Kneissl
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16:30 |
HL 44.6 |
Intensity fluctuations of infrared and green photodiodes at constant current and its correlation with voltage fluctuations — •Danylo Bohomolov and Ulrich T. Schwarz
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16:45 |
HL 44.7 |
Theoretical improvement of 40% in efficiency of AlGaN UV LED using evolution strategies optimization algorithm — •Lucie Leguay and Andrei Schliwa
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