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HL: Fachverband Halbleiterphysik
HL 7: Poster I
HL 7.20: Poster
Montag, 27. März 2023, 13:00–15:00, P2/EG
Raman spectra of CuI alloys with Ag and Br — •A.L. Pereira1, R. Hildebrandt1, J. Bredow1, C. Dethloff1, V. Gottschalch2, S. Vogt1, H. Krautscheid2, M. Grundmann1, and C. Sturm1 — 1Universität Leipzig, Felix Bloch Institute for Solid State Physics, 04103 Leipzig, Germany — 2Universität Leipzig, Institute of Inorganic Chemistry, 04103 Leipzig, Germany
CuI is a p-type semiconductor with a wide band gap of 3.1 eV that has potential for (opto-) electronic applications [1]. By alloying CuI with isoelectronic Ag or Br its properties such as e.g. the charge carrier concentration, lattice constant or band gap can be tuned.
We present our investigations on CuI alloys and their phonon properties with Raman spectroscopy. AgxCu1−xI and CuBrxI1−x (both 0≤ x≤ 1) thin films were produced with various deposition techniques such as solid-state reaction, close distance sublimation, sputter deposition and pulsed laser deposition. Raman spectroscopy measurements were conducted at low temperatures and the phonon modes were analyzed regarding their energetic position, broadening and intensity. This was supported by an oscillator strength model [2]. The Cu(Br,I) alloy revealed a nonlinear dependence of the Raman shift on the composition. In the (Ag,Cu)I alloy an apparent three-mode behavior due to a defect mode was observed and characterized.
[1] E. Krüger, et al., Appl. Phys. Lett. 113, 172102, 2018.
[2] G. Livescu, et al., J. Phys. C: Solid State Phys. 19 2663, 1986.