Parts | Days | Selection | Search | Updates | Downloads | Help

HL: Fachverband Halbleiterphysik

HL 7: Poster I

HL 7.42: Poster

Monday, March 27, 2023, 13:00–15:00, P2/EG

Growth and characterisation of local droplet etched InAs quantum dots in an InGaAs matrix — •Nikolai Spitzer, Hans-Georg Babin, Andreas Wieck, and Arne Ludwig — Ruhr-Universität Bochum, Lehrstuhl für Angewandte Festkörperphysik, Universitätsstraße 150, 44801 Bochum

We present a new local droplet etching (LDE) method for selforganized InGaAs quantum dots (QDs). We use gallium droplets to etch on an InGaAs matrix layer and fill the nanoholes with InAs. The impact of the indium concentration in the InGaAs-layer and of the deposited InAs amount after etching is investigated by atomic force microscopy and photoluminescence spectroscopy.

100% | Screen Layout | Deutsche Version | Contact/Imprint/Privacy
DPG-Physik > DPG-Verhandlungen > 2023 > SKM