SKM 2023 – scientific programme
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HL: Fachverband Halbleiterphysik
HL 7: Poster I
HL 7.44: Poster
Monday, March 27, 2023, 13:00–15:00, P2/EG
Voronoi-Cell Analysis of Density Modulated InAs Quantum Dots — •Peter Zajac1, Nikolai Bart1,2, Christian Dangel2, Kai Müller3, Andreas D. Wieck1, Jonathan Finley2, and Arne Ludwig1 — 1Ruhr-Universität Bochum, Universitätsstraße 150, 44801 Bochum, Germany — 2Walter Schottky Institut and Physik Department, Technische Universität München, Am Coulombwall 4, 85748 Garching, Germany — 3Walter Schottky Institut and Department of Electrical and Computer Engineering, Technische Universität München, Am Coulombwall 4, 85748 Garching, Germany
InAs quantum dots (QDs) grown by molecular beam epitaxy exhibit a density modulation upon growth on top of a GaAs gradient layer [1]. The local variation of the nucleation probability is ascribed to the roughness of the underlying GaAs layer. It is of interest to study the QD formation on such a surface under the scope of the capture-zone model [2]. Here, the results of AFM data analysis with focus on correlations between Voronoi cell areas and QD size parameters such as height and volume are presented.
[1] Bart, N., Dangel, C. et al. Wafer-scale epitaxial modulation of quantum dot density. Nat. Commun. 13, 1663 (2022).
[2] Löbl, Matthias C., et al. Correlations between optical properties and Voronoi-cell area of quantum dots. Phys. Rev. B 100, 155402 (2019).