SKM 2023 – wissenschaftliches Programm

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HL: Fachverband Halbleiterphysik

HL 7: Poster I

HL 7.6: Poster

Montag, 27. März 2023, 13:00–15:00, P2/EG

Epitaxial growth of GaN buffer layers on Si(111) by reactive magnetron sputtering — •Ralf Borgmann, Florian Hörich, Jürgen Bläsing, Anja Dempewolf, Frank Bertram, Jürgen Christen, Gordon Schmidt, Peter Veit, André Strittmatter, and Armin Dadgar — Otto-von-Guericke-Universität Magdeburg, FNW-IfP, Universitätsplatz 2, 39106 Magdeburg

GaN is a key material typically grown by MOVPE for high-voltage electronic devices. Reactive sputter epitaxy is an alternative to MOVPE, potentially offering much lower growth cost. Recently, we achieved high quality AlN layers on Si(111) [1] on which (Al,Ga)N layers can be grown. We present study on the effects of ammonia flow and growth temperature on GaN layer quality using MOVPE-grown GaN templates, high purity gases and targets. At Tgrowth ~705 °C and an ammonia flow of ~20 sccm, GaN shows a smooth surface and XRD (0002) ω-FWHMs around 340 arcsec. AlGaN layers can be grown in a large composition range by Al- and Ga- co-sputtering resulting in very smooth surfaces. A sputtered 1.4 mum thick AlN/AlGaN/GaN layer stack on Si(111) shows high resistivity and a vertical breakdown field strength >2.5 MV/cm, ideal as buffer for transistor devices. [1] F. Hörich et al., Journal of Crystal Growth 571, 126250 (2021)

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