SKM 2023 – wissenschaftliches Programm
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KFM: Fachverband Kristalline Festkörper und deren Mikrostruktur
KFM 6: Poster
KFM 6.19: Poster
Dienstag, 28. März 2023, 17:00–19:00, P3
Quantitative electrical characterization of conductive ferroelectric domain walls in LiNbO3 — •Manuel Zahn1,2, Elke Beyreuther1, Iuliia Kiseleva1, Ahmed S. Lotfy1, Michael Rüsing1, and Lukas M. Eng1,3 — 1Institut für Angewandte Physik, Technische Universität Dresden, 01187 Dresden — 2Experimentalphysik V, Zentrum für Elektronische Korrelation und Magnetismus, Universität Augsburg, 86135 Augsburg — 3ct.qmat: Dresden-Würzburg Cluster of Excellence - EXC 2147, Technische Universität Dresden, 01187 Dresden
Ferroelectric domain wall (DW) conductance can be divided into two separate mechanisms, (a) the injection/ejection of charge carriers across the Schottky barrier formed at the (metal-)electrode-DW junction and (b) the transport of those charge carriers along the DW. Current-voltage (I-U) characteristics recorded at variable temperatures from LiNbO3 DWs are clearly able to differentiate between these two contributions and, moreover, allow us to directly quantify the physical parameters relevant for the two mechanisms (a) and (b) mentioned above. These are, e.g., the resistance of the DW, as well as the saturation current, the ideality factor, and the Schottky barrier height of electrode/DW junction, moreover the activation energies needed to initiate the thermally activated hopping transport along DWs. We will show that this electronic transport along LiNbO3 DWs can be elegantly viewed and interpreted in an adapted semiconductor picture based on a double-diode/double-resistor equivalent circuit model.