SKM 2023 – wissenschaftliches Programm

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MA: Fachverband Magnetismus

MA 20: Spintronics (other effects)

MA 20.5: Vortrag

Dienstag, 28. März 2023, 16:00–16:15, HSZ 401

Doping induced ferromagnetism in EuTiO3 and STO/ETO/LAO heterostructures by ab-initio calculations — •Payal Wadhwa and Alessio Filippetti — Department of Physics, University of Cagliari, Sardinia, Italy

The emergence of 2DEG at oxide interfaces such as LaAlO3 (LAO) and SrTiO3 (STO) raised an immense interest in the community of oxide electronics, because of depicting outstanding properties such as field-effect driven superconductivity, high electron mobility, and magnetoresistance. An old dream of the spintronic community, remained eluded so far, has been to spin-polarize the 2DEG by introducing a magnetic layer at the interface of LAO/STO heterostructure, which may enable it to be a paramount material for spintronics and spin-orbitronic technology. A potential candidate as magnetic interlayer is EuTiO3 (ETO), having an identical lattice constant to STO. It is reported that ETO possesses G-type AFM ground state below Tn = 5.3 K, while becomes FM under tensile strain or doping. We have employed an ab-initio approach to study structural, electronic, and magnetic properties of ETO bulk and the STO/ETO/LAO heterostructure. We found, for increasing electron doping, a progressive enhancement of the FM phase in bulk ETO. Since conduction electrons can also be added to the ETO by creating a heterointerface, so we also compared the n-doped bulk ETO results with the STO/ETO/LAO heterostructure. Overall, our results for n-doped ETO and STO/ETO/LAO heterostructure depict them to be potential candidates for electronic transport and magneto-transport applications.