SKM 2023 – wissenschaftliches Programm
Bereiche | Tage | Auswahl | Suche | Aktualisierungen | Downloads | Hilfe
MA: Fachverband Magnetismus
MA 4: Spin Transport and Orbitronics, Spin-Hall Effects (joint session MA/TT)
MA 4.10: Vortrag
Montag, 27. März 2023, 11:45–12:00, HSZ 403
Optical detection of the orbital Hall effect in a light metal Ti — •Young-Gwan Choi1,2, Daegeun Jo3, Kyung-Hun Ko1, Dongwook Go4,5, Kyung-Han Kim3, Hee Gyum Park6, Changyoung Kim7,8, Byoung-Chul Min6, Uri Vool2, Gyung-Min Choi1,9, and Hyun-Woo Lee3,10 — 1DOES, SKKU, Suwon, Korea — 2MPI-CPfS, Dresden, Germany — 3Physics, POSTECH, Pohang, Korea — 4PGI and IAS, FZJ and JARA, Julich, Germany — 5GSE Mainz, Mainz, Germany — 6Center for Spintronics, KIST, Seoul, Korea — 7Physics, SNU, Seoul, Korea — 8CCES, IBS, Seoul, Korea — 9CINAP, IBS, Suwon, Korea — 10APCTP, Pohang, Korea
Electrical generation of the angular momentum current enables the development of novel memory devices, similar to spin current generation. Recently, it has been theoretically proposed that the orbital angular momentum (OAM) current can be driven by a charge current, called as the orbital Hall effect (OHE). Here we report evidence of the OHE, measured by magneto-optical Kerr effect microscopy. We detect large Kerr signals in one of the 3d transition metals, Ti, in which the high orbital Hall conductivity is predicted. We also find that the large OAM is accumulated by the OHE with a relaxation length ~70 nm. Moreover, we present the torque results in Ti/Ni. The high torque efficiency shows that the OAM injection allows for the electrical control of the magnetization. We also propose magnetic imaging using a nitrogen-vacancy scanning probe to measure OAM accumulation directly. Our results can pave the way for a deep understanding and provide techniques for generating and detecting orbital transport.