SKM 2023 – scientific programme
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O: Fachverband Oberflächenphysik
O 18: Poster: 2D Materials I
O 18.3: Poster
Monday, March 27, 2023, 18:00–20:00, P2/EG
Chemical vapor deposition of MoSe2-WSe2 lateral heterostructures with atomically sharp one-dimensional interfaces — •Ziyang Gan1, Dorian Beret2, Ioannis Paradisanos2, Hassan Lamsaadi2, Emad Najafidehaghani1, Christof Neumann1, Tibor Lehnert4, Johannes Biskupek4, Ute Kaiser4, Laurent Lombez2, Jean-Marie Poumirol3, Bernhard Urbaszek2,5, Antony George1, and Andrey Turchanin1 — 1Friedrich Schiller University Jena, Institute of Physical Chemistry, Jena, Germany — 2Université de Toulouse, INSA-CNRS-UPS, Toulouse, France — 3Université de Toulouse, CEMES-CNRS, Toulouse, France — 4Ulm University, Central Facility of Electron Microscopy, Ulm, Germany — 5Technische Universität Darmstadt, IPKM, Darmstadt, Germany
Chemical vapor deposition (CVD) enables the epitaxial growth of transition metal dichalcogenide (TMD) lateral heterostructures with one-dimensional interfaces. The growth is achieved by in situ controlling the precursor partial pressures by a two-step heating protocol. Here we characterize the lateral heterostructures of MoSe2-WSe2 by optical microscopy, Raman spectroscopy, and photoluminescence spectroscopy. Scanning transmission electron microscopy (STEM) demonstrates the high-quality 1D boundary between MoSe2 and WSe2 with a width of around 3nm. Furthermore, tip-enhanced photoluminescence (TEPL) enables to demonstrate that the heterojunction acts as an excitonic diode resulting in unidirectional exciton transfer from WSe2 to MoSe2. npj 2D Mater. Appl. 6 (2022) 84