SKM 2023 – wissenschaftliches Programm
Bereiche | Tage | Auswahl | Suche | Aktualisierungen | Downloads | Hilfe
O: Fachverband Oberflächenphysik
O 24: Poster: Ion Beam Interaction with Surfaces and Interfaces
O 24.1: Poster
Montag, 27. März 2023, 18:00–20:00, P2/EG
Defect Engineering of Graphene using Ultra-low energy Ion Implantation — •Felix Junge1, Manuel Auge1, Zviadi Zarkua2, Lino M.C. Pereira2, and Hans Hofsäss1 — 1II. Physikalisches Institut, Georg-August-Universität Göttingen — 2Quantum Solid State Physics, KU Leuven
Doping and defect engineering of graphene and TMD’s to change the electrical properties is highly desirable. To achieve this, we use a unique mass-selected ion beam deposition system, which makes it possible to work in an energy range of 10<E<600 eV for implantation and thus to implant into a 2D-lattice. We use electrostatical masking to control the region which get irradiated. Graphene was doped with Boron and subsequently examined by means of Kelvin probe measurements (SKPM). Furthermore, Helium was implanted into graphene using an electrostatic gradient for decceleration of the ions, to implant the sample with different energies at the same time, which was then analysed with Raman spectroscopy. With these experiments we can see the change of the surface potential of the graphene between a doped and undoped surface region on the one hand and the increasing defect density with increasing implantation energy on the other hand. These results are compared by IMINTDYN (a SDTrimSP based Monte Carlo program for ion implantations) simulations.
Financial support by the DFG and the Volkswagen Foundation is gratefully acknowledged.