SKM 2023 – wissenschaftliches Programm

Bereiche | Tage | Auswahl | Suche | Aktualisierungen | Downloads | Hilfe

O: Fachverband Oberflächenphysik

O 31: Focus Session: Ion Beam Interaction with Surfaces and 2D Materials III

O 31.2: Vortrag

Dienstag, 28. März 2023, 11:00–11:15, GER 38

Low-Energy Ion Implantation with an electron beam evaporator — •Tom Weinert, Denise Jennifer Erb, Stefan Facsko, René Heller, and Ulrich Kentsch — Helmholtz-Zentrum Dresden-Rossendorf, Dresden, Deutschland

For ion implantation of thin films and in particular of two-dimensional materials, it is necessary to reduce the ion energy down to 10eV. For this purpose, we develop a a simple and robust setup via a new approach. We use an electron beam evaporator to generate the desired ions. This has the advantage of a relatively small energy distribution of the ions, and in addition numerous different metal ions can be generated. An electrostatic analyzer is used to filter out the neutral atoms and to improve the energy distribution of the ion beam to below 5eV. The used ion energy is below 1keV and is suitable for the implantation of very thin surface layers or, after further energy reduction, for implantation in two-dimensional materials. Ion implantation can change the properties of two-dimensional materials, enabling, for example, new electrical, magnetic or catalytic applications.