SKM 2023 – scientific programme
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O: Fachverband Oberflächenphysik
O 51: Surface Magnetism
O 51.3: Talk
Wednesday, March 29, 2023, 12:00–12:15, REC C 213
Magnetic Phase Transition in MoS2 detected with AFM — Alexina Ollier1,2, •Akash Gupta1, Marcin Kisiel1, Mehdi Ramezani1,2, Andreas Baumgartner1,2, Christian Schönenberger1,2, and Ernst Meyer2 — 1Department of Physics, University of Basel, Klingelbergstrasse 82, CH-4056 Basel — 2Swiss Nanoscience Institute, Klingelbergstrasse 82, CH-4056 Basel
Low doping electron-electron interactions in monolayer MoS2 lead to a ferromagnetic spin order, whereas larger occupation of spin-polarized energy bands results in paramagnetism. The electron density of MoS2 might be tuned with gate voltage, thus providing the switch ability of the ferromagnetic to paramagnetic first-order phase transition. Spontaneous phase transition in two-dimensional semiconductor gated MoS2 monolayer is detected by magnetic force spectroscopy.
An abrupt and reproducible changes of the magnetic force were observed at doping concentration equal to nc = 3.0×1012 cm−2 and are attributed to ferromagnetic to paramagnetic phase change. Linear dependence of force versus external magnetic field was noted in the paramagnetic state, whereas no such dependence was found in already polarised ferromagnetic state. The extracted spin susceptibility confirms the correlated electron system and the observed hysteresis of the measured magnetic force is a strong hint for first-order type of transition.