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O: Fachverband Oberflächenphysik

O 59: Electronic Structure of Surfaces I

O 59.7: Talk

Wednesday, March 29, 2023, 16:45–17:00, REC C 213

Bulk and surface electronic structure of tunnel barrier Nb₃Br₈ in the field-free Josephson diode — •Mihir Date^1,2, Jonas.A. Krieger¹, Emily.C. McFarlane¹, Vicky Hasse³, Claudia Felser³, Stuart.S.P Parkin¹, Matthew Watson², and Niels.B.M Schröter¹ — ¹MPI-Halle, Weinberg 2, 06120 Halle (Saale), Germany — ²Diamond Light Source Ltd. Didcot, OX11 0DE, United Kingdom — ³MPI-CPfS, Nöthnitzer Straße 40, 01187 Dresden, Germany

In this work, we report the bulk and surface electronic structure of Nb₃Br₈ probed using angle resolved photoemission spectroscopy (ARPES). Nb₃Br₈ is predicted to host trivial metallic surface states (obstructed surface states (OSS)) when cleaved between specific layers [1]. Although our in-plane electronic structure is consistent with the calculated orbital resolved bandstructure, we do not observe any signatures of the OSS. Nevertheless, the doubling of periodicity of the ARPES signal along the out-of-plane momentum direction, as compared to the Brillouin zone dimension, hints towards dimerization between alternate layers through the OSS. We discuss our results in connection with the recent discovery of the field-free Josephson diode effect in the NbSe₂/Nb₃Br₈/NbSe₂ heterostructures [2].

[1] Xu, Y. et al. arXiv:2106.10276 (2021).

[2]. Wu, H. et al. Nature 604 (2022).