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O: Fachverband Oberflächenphysik
O 65: Poster: Topology and Symmetry-Protected Materials
O 65.1: Poster
Mittwoch, 29. März 2023, 18:00–20:00, P2/EG
Topological insulator Bi2Se3: the effect of doping with Fe, Ru, Os, and Mo — •Frantisek Maca1, Stanislav Cichon1, Vaclav Drchal1, Katerina Horakova1, Irena Kratochvilova1, Jan Lancok1, Vladimir Chab1, Patrik Cermak2, Cestmír Drasar2, and Jiri Navratil2 — 1Institute of Physics CAS, Praha, Czech Republic — 2University of Pardubice, Pardubice, Czech Republic
Doping is one of the most suitable ways of tuning the electronic properties of topological insulators (TI) and a promising means of a band gap opening. We report a reliable method for preparation of high-quality single crystal substrates Bi2Se3 containing anti-site defects and vacancies and doped with VIIIB and VIB columns elements.
We combine experimental (XPS, ARPES) and theoretical (ab initio) methods to analyze the electronic properties and chemical states of atoms and defects in the substitutional position in TI that can be achieved using the free melt crystallization method of the sample growth. Doping introduced change in the position of Dirac cone is shown and discussed.