SKM 2023 – wissenschaftliches Programm

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O: Fachverband Oberflächenphysik

O 67: Poster: Electronic Structure of Surfaces

O 67.2: Poster

Mittwoch, 29. März 2023, 18:00–20:00, P2/EG

Dielectric anisotropy of heteroepitaxial GaP/AlP films grown on Si(001) from first-principles calculations — •Max Großmann and Erich Runge — Technische Universität Ilmenau, Ilmenau, Deutschland

Low-defect III-V semiconductor films grown on Si(001) create new opportunities for cost-effective high-performance photovoltaic and optoelectronic devices. The recent work of Nandy et al. [1] shows a route how to drastically reduce the defect concentration of such structures through a thin GaP/AlP buffer layer. The growth of the latter is best monitored via reflection anisotropy spectroscopy (RAS). The theoretical characterization of RAS spectra is therefore vital for the monitoring of semiconductor growth processes as well as the understanding and improvement thereof. For these reasons we analyse the dielectric anisotropy for the case of a GaP/AlP/Si(001) heterostructure through first-principles calculations and compare them to the RAS measurements of Ref. [1]. [1] M. Nandy, A. Paszuk, M. Feifel, C. Koppka, P. Kleinschmidt, F. Dimroth, and T. Hannappel, A Route to Obtaining Low-Defect III/V Epilayers on Si(100) Utilizing MOCVD, Crystal Growth & Design 21, 5603-5613 (2021), 10.1021/acs.cgd.1c00410