Parts | Days | Selection | Search | Updates | Downloads | Help
TT: Fachverband Tiefe Temperaturen
TT 16: Poster: Transport
TT 16.2: Poster
Monday, March 27, 2023, 15:00–18:00, P2/OG4
Resistive switching and peculiarities of conductivity of TiTe2 point contacts — •Oksana Kvitnitskaya1, Luminita Harnagea2, Dmitri Efremov3, Bernd Büchner3,4, and Yurii Naidyuk1 — 1B.Verkin Institute for Low Temperature Physics and Engineering, NASU, Kharkiv, Ukraine — 2Dep. of Physics, Indian Institute of Science Education and Research, Pune, Maharashtra, India — 3Institute for Solid State Research, IFW Dresden, Dresden, Germany — 4Institut für Festkörper- und Materialphysik and Würzburg-Dresden Cluster of Excellence ct.qmat, TU Dresden, Dresden, Germany
Ti-based dichalcogenides TiX2 (X - S, Se, Te), display a variety of physical properties, depending on their lattice distortions, native defects, self-doping effects, intercalation, external pressure. They can exhibit semiconducting, semimetallic, CDW, and superconducting behavior, which together with their layered structure and unique properties upon exfoliation to monolayer limit, make them particularly interesting. Recently, we observed the resistive switching effect in TiTe2 point-contacts (PCs). We attributed the effect to Se vacancy drift due to a high electric field in the PC core. Here we report the resistive switching in PCs with isoelectronic TiTe2, where the ratio of the high resistance state to the low resistance state was so far up to several times, contrary to up to two orders of magnitude for TiSe2. Additionally, we observed "camel-like" dV/dI(V) spectra of TiTe2 at helium temperature with two symmetric vs V=0 humps around +/-(200-300) mV, which vanished near 200 K.