SKM 2023 – scientific programme
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TT: Fachverband Tiefe Temperaturen
TT 16: Poster: Transport
TT 16.7: Poster
Monday, March 27, 2023, 15:00–18:00, P2/OG4
Device and contact engineering of MoS2 nanotubes and nanoribbons — •Konstantin D. Schneider1, Robin T. K. Schock1, Jonathan Neuwald1, Matthias Kronseder1, Luka Pirker2, Maja Remškar2, and Andreas K. Hüttel1 — 1Institute for Experimental and Applied Physics, University of Regensburg, 93040 Regensburg, Germany — 2Solid State Physics Department, Institute Jožef Stefan, 1000 Ljubljana, Slovenia
Even though low-temperature transport measurements of a MoS2 nanotube have already demonstrated Coulomb blockade at 300 mK,1 Fermi level pinning near the conduction band at the metal-MoS2 interface requires reactive low-work function metals, which then damage the MoS2. Recently, bismuth2 was shown to drastically reduce contact resistances in planar MoS2.
Here, we present millikelvin transport measurements on MoS2 nanotubes and nanoribbons with bismuth contacts.3 Our nanotubes are grown via a chemical transport reaction, yielding diameters down to 7 nm and lengths up to several millimeters. Nanotubes were either suspended or placed on hexagonal boron nitride (hBN) in order to reduce disorder from the SiO2 substrate. The resulting devices show Coulomb blockade, with a rich set of features. Contacts are transparent, and the temperature dependence hints at single level transport.
[1] S. Reinhardt et al., Phys. Stat. Sol. RRL 13, 1900251 (2019)
[2] P. C. Shen et al., Nature 593, 211 (2021)
[3] R. T. K. Schock et al. arXiv:2209.15515