SKM 2023 – wissenschaftliches Programm

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TT: Fachverband Tiefe Temperaturen

TT 27: Focus Session: Unconventional Transport Phenomena in Low-Dimensional Superconducting Heterostructures

TT 27.9: Vortrag

Mittwoch, 29. März 2023, 12:30–12:45, HSZ 03

Gate-controlled switching in non-centrosymmetric superconducting devices — •Jennifer Koch, Leon Ruf, Elke Scheer, and Angelo Di Bernardo — Universität Konstanz, Konstanz, Germany

Gate-controlled superconducting devices have become of great interest for the development of energy-efficient hybrid superconductor/semiconductor computing architectures. The idea behind this technology stems from the recent discovery that superconducting devices can be controlled electrically with the application of a gate voltage [1-3].
We investigate gate-controlled switching devices made of the non-centrosymmetric superconductor Nb_0.18Re_0.82 for different gate-to-wire distances. This material promises a low switching voltage due to its disordered structure and should therefore be more suitable for the realization of devices compatible with CMOS transistors.

[1] G. De Simoni et al., Nature Nanotech. 13, 802 (2018)
[2] F. Paolucci et al., Nano Lett. 18, 4195 (2018)
[3] F. Paolucci et al., Phys. Rev. Applied 11, 024061 (2019)