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TT: Fachverband Tiefe Temperaturen

TT 43: Poster: Correlated Electrons II

TT 43.8: Poster

Wednesday, March 29, 2023, 15:00–18:00, P2/OG3

Manipulating the metal-insulator transition in ultrathin oxide films by strain engineering — •Sizhao Huang, Philipp Scheiderer, Judith Gabel, Michael Sing, and Ralph Claessen — Physikalisches Institut and Würzburg-Dresden Cluster of Excellence ct.qmat, Universität Würzburg, 97074 Würzburg, Germany

The relationship between metal-insulator transition (MIT) and strain relaxation in films of strongly correlated perovskite oxides has been intensively studied. The oxide films can emerge numerous phenomena when the film thickness is reduced towards the 2D limit, such as SrVO3 (SVO). In our previous studies on SrTiO3 (STO) capped SVO films, a transition from the Mott insulating state at 6 u.c. to metallic behaviour at 10 u.c. film thickness has been found. In order to further explore the relationship between MIT transition and orbital occupation, we have grown coherently strained SVO thin films on various substrates with different lattice constants by pulsed laser deposition (PLD) in an Ar gas background. Using x-ray photoelectron spectroscopy and transport measurements, we have found that the MIT in SVO thin films can be fine-tuned by both film thickness and strain.