SMuK 2023 – wissenschaftliches Programm
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T: Fachverband Teilchenphysik
T 148: Si/SiPM, Pixel/Other
T 148.1: Vortrag
Donnerstag, 23. März 2023, 17:30–17:45, WIL/C307
Study of the self-heating in SiPMs — •Carmen Victoria Villalba Petro, Erika Garutti, Robert Klanner, Stephan Martens, and Jörn Schwandt — Universität Hamburg, Luruper Chaussee 149, 22761 Hamburg, Deutschland.
The main effect of radiation damage in a Silicon-Photomultiplier (SiPM) is a significant increase in the dark current. For SiPMs irradiated at Φeq= 1013 cm−2 and operated at 2 V above breakdown voltage, Vbd, the leakage current leads to a power of 50 mW. Such power produces an instantaneous increase in the SIPM temperature, which needs to be cooled down by proper thermal contact to a cooling system. The performance of the SiPM changes with temperature (T). The Vbd increases with T. For a fixed bias voltage, this leads to a decrease in gain and PDE. A method has been developed to determine the SiPM temperature increase induced by the power dissipated in the SiPM multiplication layer. Heating studies were performed with a KETEK SiPM, glued on an Al2O3 substrate, which is either directly connected to the T-controlled chuck of a probe station, or through layers of material with well-known thermal resistance. The SiPM is illuminated by a LED operated in DC-mode. The SiPM current is measured and used to determine the steady-state temperature as a function of power dissipated in its multiplication region and of the thermal resistance, as well as the time constants for heating and cooling. The method is applied to MPPC samples before and after irradiation. The knowledge of the multiplication region temperature can be used to properly determine the working parameters of irradiated SiPMs.