Berlin 2024 – wissenschaftliches Programm
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DS: Fachverband Dünne Schichten
DS 1: Thin Oxides and Oxide Layers (joint session DS/KFM)
DS 1.4: Vortrag
Montag, 18. März 2024, 10:15–10:30, A 053
Exploration of zirconium doping in pulsed laser deposited α-Ga2O3 for devices — •Sofie Vogt1, Thorsten Schultz2,3, Clemens Petersen1, Holger von Wenckstern1, Norbert Koch2,3, and Marius Grundmann1 — 1Universität Leipzig, Felix-Bloch-Institut, Leipzig — 2Humboldt Universität zu Berlin, Institut für Physik, Berlin — 3Helmholtz-Zentrum Berlin für Materialien und Energie GmbH, Solar Energy, Berlin
Gallium oxide, known for its ultrawide bandgap, crystallizes in different polymorphs, of which the β-phase is the thermodynamically most stable and most investigated one. However, the metastable corundum structured α-phase exhibits a wider bandgap and therefore a potentially higher electrical breakdown field compared to β-Ga2O3[1]. Doping of α-Ga2O3 with tin, silicon and germanium has been demonstrated[2,3] . We present α-Ga2O3 thin films grown by pulsed laser deposition in a two-step process. Undoped α-Ga2O3 grown at high temperature is used as buffer layer. The zirconium doped α-Ga2O3 is deposited atop the buffer layer at a temperature <600∘C, to ensure the deposition of conductive thin films. The structural and electrical properties of Zr doped thin films are compared to Sn, Si and Ge doped thin films with regards to the crystal quality, conductivity, free carrier concentration and electron mobility. First Schottky barrier diodes based on the α-Ga2O3:Zr thin films are presented.
[1] Higashiwaki et al., Appl. Phys. Lett., 100, 013504 (2012)
[2] Akaiwa et al., phys. status solidi (a), 217, 3, 1900632 (2020)
[3] Vogt et al., phys. status solidi (a), 220, 3, 2200721 (2023)