Berlin 2024 – wissenschaftliches Programm
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DS: Fachverband Dünne Schichten
DS 1: Thin Oxides and Oxide Layers (joint session DS/KFM)
DS 1.6: Vortrag
Montag, 18. März 2024, 11:00–11:15, A 053
Investigation of electrical properties of metal oxide semiconductors thinfilms — •Pinar Oruc1, Ali Orkun Cagirtekin1, Sukru Cavdar1, Nihat Tugluoglu2, and Haluk Koralay1 — 1Gazi University, Faculty of Science Department of Physics, Ankara Turkiye. — 2Giresun University, Faculty of Engineering, Department of Energy Engineering, Giresun, Turkiye.
Metal oxide semiconductor materials such as TiO2, ZnO, V2O5, and MoO3 have very large technological area because of their useful properties [1]. Generally, these materials are interesting by scientific community because they have wide forbidden energy band gap, good electrical, and optical properties [2]. With the development of technology, the development of higher performance and cost-effective devices has become more important. For these reasons, the importance of these semiconductor metal oxide structures has gradually increased. In this study, electrical characterization of multilayer semiconductors device was investigated. Different metal oxide thin film layers were grown on the fluorine doped tin oxide (FTO) substrate by using different methods. It has been observed that both thin films obtained with different techniques have a homogeneous surface. Electrical measurements of the device were taken at different temperatures, widely frequency regions. As a result of electrical measurements, the device showed good diode behavior also electrical behavior of the fabricated device showed better electrical properties as the increasing temperature. According to the results, the fabricated device can be used many electronic areas.