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DS: Fachverband Dünne Schichten

DS 4: Layer Deposition

DS 4.2: Talk

Monday, March 18, 2024, 16:15–16:30, A 060

Fast and efficient simulation of the FEBID process — •Alexander Kuprava and Michael Huth — Goethe University, Frankfurt, Germany

Over the last decade focused electron beam induced deposition or FEBID has been shown to be a promising technique for next generation nanofabrication. Unlike conventional lithography techniques, FEBID enables true free-form fabrication of 2D and 3D structures and opens a path for the development of novel nanomaterials. However, the shape-true transfer from a 3D CAD model to a deposit represents a serious challenge to a more widespread practical usage of the method. Different simulation approaches, e.g., and slicers or pattern optimizers have been reported, e.g., addressing various aspects of the shape-true transfer. Our effective hybrid Monte Carlo-continuum simulation of the FEBID process allows prediction of the resulting shape with the consideration of beam heating effects of the structure.

The simulation represents a material deposition model based on the dissociation of adsorbed precursor molecules by the electron beam. The deposition process is based on a reaction-diffusion continuum model describing the influence of precursor adsorption, desorption, diffusion and dissociation on the surface precursor coverage and consequently on the growth rate.

Owing to the reasonable execution speed on a regular desktop, the simulation can assist the laborious work of pattern file and parameter optimization during the fabrication of complex 3D structures.