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DS: Fachverband Dünne Schichten

DS 4: Layer Deposition

DS 4.3: Talk

Monday, March 18, 2024, 16:30–16:45, A 060

GaS - a Two-Dimensional UV emitting material: Challenges of MOCVD Synthesis — •Robin Günkel¹, Stefan Renato Kachel^1,2, Leonard Neuhaus², Lukas Erlemeier², Tigmanshu Sundrial¹, Johannes Glowatzki¹, Jürgen Belz¹, Carsten von Hänisch², J. Michael Gottfried², and Kerstin Volz¹ — ¹Material Sciences Center and Department of Physics, Philipps-Universität Marburg, Germany — ²Material Sciences Center and Department of Chemistry, Philipps-Universität Marburg, Germany

Gallium sulfide (GaS), a 2D semiconductor similar to Transition Metal Dichalcogenides (TMD), has a band gap in the UV wavelength range, making it a candidate for UV LED applications. The goal of this study is to synthesize a 2D GaS crystal directly on a substrate, rather than producing it by mechanical exfoliation. Metal-Organic Chemical Vapor Deposition (MOCVD) enables the controlled growth of atomically thin films. This type of synthesis is scalable, with process adaptations limited primarily by substrate size and reactor dimensions. We use established MOCVD precursors such as di-tert-butyl sulfide (DTBS) and tri-tert-butyl gallium (TTBGa). First growth experiments show excess metallic Ga remaining on the surface of the 2D layered GaS. When we try to compensate for the excess Ga by increasing the supply of sulfur, growth is inhibited. To overcome this challenge, a pulsed growth sequence rather than a continuous one is applied. Furthermore, as additional approach the surface chemistry is investigated, and the application of single source precursor is under discussion.