Berlin 2024 – wissenschaftliches Programm
Bereiche | Tage | Auswahl | Suche | Aktualisierungen | Downloads | Hilfe
DS: Fachverband Dünne Schichten
DS 4: Layer Deposition
DS 4.4: Vortrag
Montag, 18. März 2024, 16:45–17:00, A 060
MBE growth and characterization of α-FeGe2 films on GaAs(001) — •Moritz N. L. Hansemann, Michael Hanke, Achim Trampert, and Jens Herfort — Paul Drude Institut, Berlin, Germany
Layered 2D magnets are becoming a cornerstone in the realization of spintronic devices. The layered material α-FeGe2 adds to the family of magnetic materials with a ferromagnetic antiferromagnetic phase transition, predicted by density functional theory calculations (DFT).
We show the growth by molecular beam epitaxy of the novel α-Phase of FeGe2 on GaAs (001) and present comprehensive structural characterization by atomic force microscopy (AFM), X-ray diffraction (XRD), and high resolution transmission electron microscopy (hR-TEM). For the growth of α-FeGe2 we utilize solid phase epitaxy of amorphous Ge on Fe3Si. Subsequent annealing reveals the layered structure of α-FeGe2 in the P4mm spacegroup. Reciprocal Space Maps (RSM) and TEM images show excellent epitaxial alignment and high structural quality. We experimented with off-stoichiometric growth by buffering Ge and report the formation of Ge agglomerates (droplets) on the surface. Additionally we present initial Hall- and I-V-measurements that show possible semimetallic behavior.