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HL: Fachverband Halbleiterphysik

HL 1: Nitrides: Preparation and characterization I

HL 1.2: Vortrag

Montag, 18. März 2024, 09:45–10:00, EW 015

Optical properties of cubic In_xGa_1−xN thin films — •Jonas Rose¹, Elias Baron¹, Rüdiger Goldhahn¹, Mario Zscherp², Silas A. Jentsch², Sangam Chatterjee², Jörg Schörmann², and Martin Feneberg¹ — ¹Institut für Physik, Otto-von-Guericke-Universität Magdeburg, Germany — ²I. Physikalisches Institut, Justus-Liebig-Universität Gießen, Germany

Cubic InGaN (c-InGaN) is a promising material for fabricating highly efficient optoelectronical devices and can potentially replace its hexagonal counterpart for certain applications. Due to the lack of internal polarization fields and lower band gap energies c-InGaN is a suitable candidate for applications in the visible spectrum. Especially InGaN/GaN quantum wells can be used for green light-emitting devices. Therefore, the knowledge of its optical properties is of special interest. In this context, spectroscopic ellipsometry is a sophisticated experimental technique due to its high sensitivity as well as contact- and destruction-free operation. Recently, several breakthroughs in crystal growth regarding structural quality and range of In-content have been achieved.
We present our investigation of c-InGaN thin films deposited by plasma-assisted molecular beam epitaxy (MBE) on 3C-SiC/Si substrates in (001) orientation. Spectroscopic ellipsometry measurements in the IR and VIS-UV spectral range yield the dielectric function containing phonon and plasmon contributions as well as interband transitions. Additionally, many-body effects affecting the absorption edge are taken into account.