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HL: Fachverband Halbleiterphysik

HL 18: 2D Materials and Heterostructures: Emerging Materials and Phenomena

Tuesday, March 19, 2024, 09:30–13:00, EW 201

09:30 HL 18.1 Quantum transport in monolayer and multilayer Black PhosphoreneJouda J. Khabthani, Khouloud Chika, Ghassen Jemaï, Didier Mayou, and •Guy Trambly de Laissardière
09:45 HL 18.2 Influence of highly charged ion irradiation on the electrical and memory properties of black phosphorus field-effect transistors — •Stephan Sleziona, Osamah Kharsah, Lucia Skopinski, Leon Daniel, Jennifer Schmeink, and Marika Schleberger
10:00 HL 18.3 On-site Coulomb energy in TMDC compounds — •Yashasvi Mehra, Samuel Bealieu, Mauro Fanciulli, Olivier Heckmann, Karol Hricovini, Marcin Rosmos, Natalia Olszowska, Aki Ismo Olavi Pulkkinen, Jan Minar, and Maria Christine Richter
10:15 HL 18.4 Tuning properties of 2D Janus MoSSe — •Jennifer Schmeink, Jens Osterfeld, Osamah Kharsah, and Marika Schleberger
10:30 HL 18.5 PtSe2 vdW single-crystal surfaces studied at the atomic scale with ncAFM — •Igor Sokolović, Saeed Rasouli, Bing Wu, Zdeněk Sofer, Aleksandar Matković, Michael Schmid, Ulrike Diebold, and Tibor Grasser
10:45 HL 18.6 Nanoscale Charge Transport Characterization of Novel Type 2D MOFs and COFs — •Jonas Pöhls, Zhiyong Wang, Laura Frey, Renhao Dong, Dana Medina, Xinliang Feng, and Thomas Weitz
  11:00 15 min. break
11:15 HL 18.7 Srain control of exciton and trion spin-valley dynamics in monolayer transition metal dichalcogenidesZhao An, Pedro Soubelet, Yaroslav Zhumagulov, Michael Zopf, •Alex Delhomme, Chenjiang Qian, Paulo Faria Junior, Jaroslav Fabian, Xin Cao, Jingzhong Yang, Andreas Stier, Fei Ding, and Jonathan Finley
11:30 HL 18.8 Strain control of hybridization between dark and localized excitons in a 2D semiconductor — •Pablo Hernández López, Sebastian Heeg, Christoph Schattauer, Sviatoslav Kovalchuk, Abhijeet Kumar, Douglas J. Bock, Jan N. Kirchhof, Bianca Höfer, Kyrylo Greben, Denis Yagodkin, Lukas Linhart, and Florian Libisch
11:45 HL 18.9 Strain fingerprinting of exciton valley character in 2D semiconductors — •Abhijeet Kumar, Denis Yagodkin, Roberto Rosati, Douglas J. Bock, Christoph Schattauer, Sarah Tobisch, Joakim Hagel, Bianca Höfer, Jan N. Kirchhof, Pablo H. López, Kenneth Burfeindt, Sebastian Heeg, Cornelius Gahl, Florian Libisch, Ermin Malic, and Kirill I. Bolotin
12:00 HL 18.10 Electronic effects on wrinkled 2D TMDCs — •Mohammadreza Daqiqshirazi and Thomas Brumme
12:15 HL 18.11 Extended suspension of transition metal dichalcogenide monolayers — •Leonard Geilen, Lukas Schleicher, Eva Weig, and Alexander Holleitner
12:30 HL 18.12 Impact of atomic layer deposition growth rate on the properties of MoS2 and WS2 — •Christian Tessarek, Tim Grieb, Florian F. Krause, Christian Petersen, Alexander Karg, Alexander Hinz, Niels Osterloh, Christian Habben, Stephan Figge, Andreas Rosenauer, and Martin Eickhoff
12:45 HL 18.13 Oxidative chemical vapor deposition of highly conductive and transparent polymer layers for contact fabrication in 2D-MoS2-based FET structures — •Jinmei Zhu, Florian Meierhofer, Marius Eckert, Stefan Wundrack, and Tobias Voss
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