Berlin 2024 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 25: Oxide Semiconductors I
HL 25.1: Vortrag
Mittwoch, 20. März 2024, 09:30–09:45, ER 325
Photoluminescence study of corundum-like α-Ga2O3 — •Lennart Hölzer1, Elias Kluth1, Rüdiger Goldhahn1, Dae-Woo Jeon2, Kazuaki Akaiwa3, and Martin Feneberg1 — 1Institut für Physik, Otto-von-Guericke-Universität Magdeburg, Germany — 2Korean Institute of Ceramic Engineering and Technology, Jinju, South Korea — 3Department of Information and Electronics Engineering, Tottori University, Japan
Ga2O3 is a polymorphic ultra-wide band gap semiconductor with promising usage in power electronic devices like MOSFETs and Schott- ky diodes. Due to its thermodynamical stability, research has primarily focused on the stable β-phase.
Despite being metastable, α-Ga2O3 is just as interesting with an even wider band gap of ≈ 5.6 eV. Band gap engineering also has been proven possible in a range of about 3.7 to 9 eV by alloying with Al, In or Ti. This enables applications in devices such as solarblind photodetectors and FETs.
There is, nevertheless, a significant lack of knowledge of the optical properties. To investigate these, c-plane and m-plane α-Ga2O3 samples grown on sapphire substrates by HVPE and mist-CVD were studied using low temperature photoluminescence. A luminescence band in the UV-region at 3.75 eV was identified. The correlation of temperature and luminescence intensity was evaluated, yielding activation energies in the magnitude of the donor binding energy.