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Berlin 2024 – wissenschaftliches Programm

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HL: Fachverband Halbleiterphysik

HL 25: Oxide Semiconductors I

HL 25.11: Vortrag

Mittwoch, 20. März 2024, 12:30–12:45, ER 325

Two-dimensional electron gas in polar-discontinuity doped LaInO3/BaSnO3 heterostructure grown by plasma-assisted molecular beam epitaxy — •Georg Hoffmann1, Martina Zupancic2, Martin Albrecht2, and Oliver Bierwagen11Paul-Drude-Institut für Festkörperelektronik, Leibniz-Institut im Forschungsverbund Berlin e. V., Hausvogteiplatz 5-7, 10117 Berlin, Germany — 2Leibniz-Institut für Kristallzüchtung, Max-Born-Straße 2, 12489 Berlin, Germany

Transparent semiconducting oxides (TSO’s) are key players for new (opto-)electronic devices. In the search for suitable TSOs, the wide-bandgap semiconductor BaSnO3 has been reported to provide the highest room temperature electron mobilities within the perovskite oxides - up to 320 cm2/Vs for La doped bulk material [1]. Interfacing the undoped, nonpolar BaSnO3 with the closely lattice-matched, polar LaInO3 is predicted to create a two-dimensional electron gas (2DEG) with a charge carrier density of up to 2×1014/cm2 due to polar-discontinuity doping [2]. Here, we demonstrate the adsorption-controlled growth of LaInO3/BaSnO3 heterostructures grown by plasma-assisted molecular beam epitaxy. The formation of the 2DEG at the LaInO3/BaSnO3 interface is confirmed by capacitance-voltage and van der Pauw-Hall measurements. The extracted sheet electron concentrations above 2×1013/cm2 and RT electron mobilities above 100 cm2/Vs pave the way for further device studies.

[1] H. J. Kim et al., Appl. Phys. Express, 5, 061102 (2012). [2] K. Krishnaswamy et al., Appl. Phys. Lett. 108, 083501 (2016).

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