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Berlin 2024 – wissenschaftliches Programm

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HL: Fachverband Halbleiterphysik

HL 38: Oxide Semiconductors II

HL 38.7: Vortrag

Donnerstag, 21. März 2024, 11:15–11:30, ER 325

Phase-selective growth of κ- vs β-Ga2O3 and (InxGa1−x)2O3 by In-mediated metal exchange catalysis in plasma-assisted molecular beam epitaxy — •Andrea Ardenghi1, Oliver Bierwagen1, Jonas Lähnemann1, Joe Kler2, Andreas Falkenstein2, Manfred Martin2, and Piero Mazzolini31Paul-Drude-Institut für Festkörperelektronik, Leibniz-Institut im Forschungsverbund Berlin e.V., Hausvogteiplatz 5-7, 10117 Berlin, Germany — 2Institute of Physical Chemistry, RWTH Aachen University, D-52056 Aachen, Germany — 3Department of Mathematical, Physical and Computer Sciences, University of Parma, Parco Area delle Scienze 7/A, 43124 Parma, Italy

Monoclinic β-Ga2O3 is an ultra-wide bandgap semiconductor (Eg ≈ 4.8 eV) that is attracting increasingly attention for power electronics applications. The metastable kappa polymorph (κ-Ga2O3), which shares a comparable bandgap, exhibits piezoelectric and potentially ferroelectric properties. In-incorporation into any polymorphs of Ga2O3 allows to lower their bandgap. In this work, we provide a guideline to achieve single phase κ-, β-Ga2O3 as well as their (InxGa1−x)2O3 alloys up to x = 0.14 and x = 0.17 respectively, using In-mediated metal exchange catalysis in plasma assisted molecular beam epitaxy (MEXCAT-MBE). The polymorph transition from κ to β is addressed, highlighting the role played by the thermal stability of the κ-Ga2O3. Additionally, we demonstrate the growth of (-201) β-Ga2O3 on c-Al2O3 at temperatures at least 100 C above those achievable with conventional non-catalyzed MBE.

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