HL 7: Transport properties I
Montag, 18. März 2024, 15:00–17:00, ER 325
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15:00 |
HL 7.1 |
Challenges of mapping transport parameters of N-doped 4H-SiC by Raman spectroscopy — •Hannes Hergert, Matthias T. Elm, and Peter J. Klar
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15:15 |
HL 7.2 |
Stoichiometry fluctuations and geometrical confinement in random alloys: a case study on SiGe:C — •Daniel Dick, Florian Fuchs, Jörg Schuster, and Sibylle Gemming
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15:30 |
HL 7.3 |
Ti2MnAl and its modifications, as possible Spin-Gapless-Semiconductor materials. — •Jerzy Goraus, Wojciech Gumulak, and Jacek Czerniewski
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15:45 |
HL 7.4 |
Electrical Conductivity and Carrier Mobility for Strongly Anharmonic Materials from First Principles — •Jingkai Quan, Christian Carbogno, and Matthias Scheffler
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16:00 |
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15 min. break
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16:15 |
HL 7.5 |
Electronic Transport Properties of Janus Ge-Based Two-Dimensional IV-V Monolayer — •Dogukan Hazar Ozbey, Gozde Ozbal Sargin, Veli Ongun Ozcelik, and Engin Durgun
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16:30 |
HL 7.6 |
Charge Carrier Mobilities in 2D Carbon Allotropes — •Elif Ünsal, Alexander Croy, Alessandro Pecchia, and Gianaurelio Cuniberti
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16:45 |
HL 7.7 |
Comparison of the application of the TRMC technique for the characterization of crystalline silicon and perovskite solar cell absorber material and efficient surface passivation — Arpana Singh, Biruk Alebachew Seid, Felix Lang, Marinus Kunst, and •Heinz-Christoph Neitzert
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