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O: Fachverband Oberflächenphysik

O 109: Focus Session: Proximity Effects in Epitaxial Graphene II

O 109.3: Vortrag

Freitag, 22. März 2024, 11:15–11:30, MA 141

Shaping superconducting proximity effect on graphene with nanometric precision — •Stefano Trivini¹, Eva Cortès-del Rio⁶, Tim Kokkeler⁹, Jon Ortuzar¹, Vladimir Cherkez^3,4, Jean-Yves Veuillen^3,4, Pierre Mallet^3,4, F. Sebastian Bergeret^8,9, Juan Carlos Cuevas^5,6, Ivan Brihuega^6,5,7, and Nacho Pascual^1,2 — ¹CICnanoGUNE 20018 San Sebastián, Spain — ²Ikerbasque, 48013 Bilbao, Spain — ³Institut Néel, F-38400 Grenoble, France. — ⁴Universitè Grenoble Alpes, F-38042 Grenoble, France. — ⁵IFIMAC, E-28049 Madrid, Spain. — ⁶UAM, E-28049 Madrid, Spain. — ⁷Instituto Nicolás Cabrera E-28049 Madrid, Spain — ⁸DIPC 20018 San Sebastian, Spain — ⁹CFM-MPC, E-20018 San Sebastián, Spain

Graphene can be turned superconducting by the proximity effect. The role of graphene gate-tunable density of states is crucial for understanding the stabilization of a collective proximitized state. Here, we investigate the proximitized superconductivity in graphene bilayers in contact with Pb islands grown on top. In particular, we compare, using LT-STM, the effect of superconducting Pb on graphene grown on the two faces of a polar SiC(1000) crystal. The effect of surface DOS turns out to be crucial. On the Si-side, we identify a collective superconducting state with a small pseudogap, while in the C-side, superconductivity is strong but local. Furthermore, we developed a method to laterally manipulate the Pb islands on graphene and build controllable Superconductor-Graphene structures.