DPG Phi
Verhandlungen
Verhandlungen
DPG

Berlin 2024 – wissenschaftliches Programm

Bereiche | Tage | Auswahl | Suche | Aktualisierungen | Downloads | Hilfe

O: Fachverband Oberflächenphysik

O 17: Semiconductor Substrates II: Structure, Epitaxy, Growth

Montag, 18. März 2024, 15:00–17:00, MA 144

15:00 O 17.1 Bimodal Growth of Fe islands on graphene — •Yisheng Gu
15:15 O 17.2 Local GaAs growth on patterned Si(001) surfaces by Laser-assisted MOVPE — •Christian Bruckmann, Jürgen Bläsing, Armin Dadgar, and André Strittmatter
15:30 O 17.3 Growth of vanadium on Si(111) — •Dang Liu
15:45 O 17.4 In-situ analysis of phase transitions in ultrathin nickel silicides by time-of-flight medium energy ion scattering — •Carolin Frank, Kevin Vomschee, Radek Holeňák, Eleni Ntemou, and Daniel Primetzhofer
  16:00 O 17.5 The contribution has been withdrawn.
16:15 O 17.6 Atomic structure of As-modified Si(100) surfaces prepared in MOCVD ambience utilizing background arsenicChris Yannick Bohlemann, Agnieszka Paszuk, Manali Nandy, Aaron Flötotto, Max Großmann, Oleksandr Romanyuk, •Kai Daniel Hanke, Peter Kleinschmidt, Erich Runge, and Thomas Hannappel
16:30 O 17.7 Towards an ab initio kinetic Monte Carlo model for the growth of β-Ga 2 O 3 (100) — •Qaem Hassanzada, Konstantin Lion, Claudia Draxl, and Matthias Scheffler
  16:45 O 17.8 The contribution has been withdrawn.
100% | Mobil-Ansicht | English Version | Kontakt/Impressum/Datenschutz
DPG-Physik > DPG-Verhandlungen > 2024 > Berlin