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O: Fachverband Oberflächenphysik
O 29: Poster: 2D Materials
O 29.18: Poster
Dienstag, 19. März 2024, 12:30–14:30, Poster A
Electronic properties of a magnetic semiconductor: V-doped WSe2 — •Jana Kähler1,2, Sinja H. Weychardt1,2, Florian K. Diekmann1,2, Matthias Kalläne1,2, and Kai Rossnagel1,2 — 1Ruprecht Haensel Laboratory, Deutsches Elektronen-Synchrotron DESY, 22607 Hamburg, Germany — 2Institut für Experimentelle und Angewandte Physik, Christian-Albrechts-Universität zu Kiel, 24098 Kiel, Germany
Spintronics is proposed as an energy efficient alternative to conventional electronics with a wide range of applications, e.g., in the field of quantum computing. To realize efficient spin transport properties, magnetic semiconductors with a Curie temperature around room temperature and the ability to switch the magnetic order by electrical gating are promising candidates. The vanadium-doped layered transition metal dichalcogenide 2H-WSe2, which is characterized by strong spin-orbit coupling, a homogeneous magnetic doping distribution up to doping levels of a few percent, and the prediction of gate tunability, is a very promising candidate. However, many open questions remain regarding the electronic functionality.
Here, we present first results on the electronic transport properties and the momentum-resolved electronic structure of V-doped WSe2 in comparison to pristine bulk samples. The samples were grown in our laboratory by chemical vapor transport and with different doping concentrations. Future magnetic structure investigations such as X-ray magnetic circular dichroism and spin- and momentum-resolved photoemission spectroscopy are discussed.