Quantum 2025 – wissenschaftliches Programm
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MON: Monday Contributed Sessions
MON 21: Quantum Materials
MON 21.8: Vortrag
Montag, 8. September 2025, 18:15–18:30, ZHG103
Low-density InAs quantum dots grown by local droplet etching for telecom O-band single-photon emission — •Elias Kersting, Nikolai Spitzer, Severin Krüger, Hans Georg Babin, Andreas Wieck, and Arne Ludwig — Lehrstuhl für Angewandte Festkörperphysik, Ruhr-Universität Bochum, Germany
InAs quantum dots (QDs) grown by molecular beam epitaxy (MBE) are promising candidates for single-photon sources (SPS). Emission in the telecom O-band (1260 - 1360 nm) is particularly desirable due to the low transmission loss in optical fibers. However, conventional Stranski-Krastanov (SK) InAs QDs face challenges in achieving low and well-controlled densities in the suitable range of 0.1-10 QDs/µ m2, as well as in precisely tuning the emission wavelength.
We present an alternative approach based on local droplet etching (LDE), in which nanoholes in a GaAs matrix are filled with InAs to form QDs. The dot density is determined by the nanohole pattern, enabling precise and scalable control. A strain-reducing layer (SRL) enables shifting of the emission wavelength into the telecom O-band. Homogeneous QD growth is achieved through shutter-synchronized deposition, making this approach well-suited for scalable SPS fabrication. We detail the fabrication method and present structural and optical characterization results.
Keywords: Molecular beam epitaxy (MBE); Local droplet etching (LDE); Quantum Dots (QDs); O-band; Photoluminescence