Bereiche | Tage | Auswahl | Suche | Aktualisierungen | Downloads | Hilfe
MON: Monday Contributed Sessions
MON 23: Poster Session: Fundamental Aspects and Model Systems
MON 23.52: Poster
Montag, 8. September 2025, 18:30–20:30, ZHG Foyer 1. OG
Giant Stark-shift of a defect emitter in a strained WSe2 monolayer — Felix Schaumburg1, Fabian Stechemesser1, Hendrik Mannel1, Jeniffer König2, Cornelius Dietrich2, Corinne Steiner3, Patricia Pesch3, Axel Lorke1, •Günther Prinz1, Martin Geller1, and Annika Kurzmann2 — 1Universität Duisburg-Essen, Duisburg, Deutschland — 2Universität zu Köln, Köln, Deutschland — 3RWTH Aachen, Aachen, Deutschland
The search for quantum emitters for quantum technologies is one of today’s fastest-growing fields in research worldwide. Here, we investigate the electrical-field dependent optical emission of a two-dimensional (2D) heterostructure, based on tungsten diselenide (WSe2). Hexagonal boron nitride layers provide electrical isolation, and few-layer graphene acts as a backgate electrode. The heterostructure was placed on a silicon substrate with SiO2 nanopillars to create local strain. In the WSe2 layer, defects have been introduced by 100 kV electron irradiation. µ-Photoluminescence (PL) measurements of single emitters show narrow emission lines and single photon emission.
By applying voltages to the graphene and the metallic top gate, an electric field can be introduced across the WSe2. We will present µ-PL spectra of emitters depending on the gate voltage and observe a giant shift in wavelength up to 6 nm, when the gate voltage is changed by 1.5V. Additionally, the intensity of the emitters is strongly dependent on the absolute value of the gate voltage. The combination of defect engineering, strain-induced localization, and electric field control offers a promising route toward scalable quantum emitter platforms.
Keywords: van der Waals heterostructure; tungsten diselenide; single photon emitter; photoluminescence; spectroscopy