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THU: Thursday Contributed Sessions
THU 13: Poster Session: Applications
THU 13.69: Poster
Donnerstag, 11. September 2025, 16:30–18:30, ZHG Foyer 1. OG
Defect Centers in Hexagonal Boron Nitride for Single-Photon Emitters — •Marcel Buch1, Jan Böhmer2, Annkathrin Köhler2, Carsten Ronning2, and Claudia Rödl1 — 1Institut für Festkörpertheorie und -optik, Friedrich-Schiller-Universität Jena, Max-Wien-Platz 1, 07743 Jena, Germany — 2Institut für Festkörperphysik, Friedrich-Schiller-Universität Jena, Max-Wien-Platz 1, 07743 Jena, Germany
Single photons constitute an indispensable resource for emerging quantum technologies: They serve as qubits in quantum computing architectures, enable secure communication via quantum key distribution, and facilitate unprecedented sensitivity in quantum sensing. A central challenge in deploying these applications is the realization of stable, room-temperature single-photon sources with narrow emission linewidths and high photostability. Defects in hexagonal boron nitride (h-BN), a van-der-Waals-bonded layered semiconductor, have recently attracted significant attention in this respect due to their demonstrated single-photon emission at ambient conditions.
We use ab-initio simulations in the framework of density-functional theory and many-body perturbation theory to characterize and predict structural, electronic, and optical properties of intrinsic point defects in h-BN, such as vacancies and antisites, as well as extrinsic defects, that are, for instance, due to Ga irradition. We compare our calculations to luminescence data obtained for h-BN flakes whose emission properties are modified by irradiation with focused electron and ion beams.
Keywords: single-photon emitter; defects; ab-initio simulation; density-functional theory