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TUE: Tuesday Contributed Sessions
TUE 1: QIP Implementations: Photons III
TUE 1.4: Vortrag
Dienstag, 9. September 2025, 15:00–15:15, ZHG001
Stark Effect Limitations in Optical Addressing of Phosphorus Donors in Si-28 — •Nico Eggeling1, Jens Hübner1, Michael Oestreich1, and N.V. Abrosimov2 — 1Leibniz Universität Hannover, Germany — 2IKZ Berlin, Germany
Phosphorus donors in isotopically pure Si-28 serve as powerful qubits in electrical measurements. Combining these donors with optical methods seems highly promising[1]. However, surprisingly, spectral hole-burning experiments have not yet achieved Fourier-limited line shapes, a crucial requirement for efficient optical addressing[2]. For the first time on Si-28, we employ time-resolved spectral hole-burning spectroscopy to demonstrate that the primary cause is a random quadratic Stark-Effect, rooted in the formation of ionized donor-acceptor pairs. Monte Carlo simulations validate that the unavoidable acceptor background doping in silicon is responsible for this limitation and open a method to suppress the influence of these acceptors efficiently. This approach not only improves the optical performance of phosphorus-doped Si-28 but also paves the way for the further advancement of solid-state qubits.
[1] Sauter et al., Phys. Rev. Lett. 126, 137402 (2021)
[2] Yang et al., Appl. Phys. Lett. 95, 122113 (2009)
Keywords: QuBit; Spectroscopy; Silicon