HL 9: Oxide Semiconductors I
Montag, 17. März 2025, 15:00–16:30, H17
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15:00 |
HL 9.1 |
Nitrogen Doping of Sputtered BiVO4 Thin Films — •Hannah Sassenfeld, Tsedenia Zewdie, Ian D. Sharp, and Verena Streibel
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15:15 |
HL 9.2 |
Plasma Plume Deflection and Target Surface Roughness During Pulsed Laser Deposition of Functional Oxides — •Jonas Elz, Holger von Wenckstern, and Marius Grundmann
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15:30 |
HL 9.3 |
Analysis of film thickness distributions for combinatorial pulsed laser deposition — •Clemens Petersen, Marius Grundmann, and Holger von Wenckstern
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15:45 |
HL 9.4 |
Influence of different gate metals on α-Ga2O3 MESFET device performance — •Sebastian Köpp, Clemens Petersen, Sofie Vogt, Holger von Wenckstern, and Marius Grundmann
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16:00 |
HL 9.5 |
Adsorption-controlled growth of κ-Ga2O3 — •Alexander Karg, Niklas Krantz, Manuel Alonso-Orts, Marco Schowalter, Patrick Vogt, Andreas Rosenauer, and Martin Eickhoff
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16:15 |
HL 9.6 |
Realization of highly rectifying pn-heterojunctions on pulsed laser deposited α-Ga2O3 thin films — •Paul Bokemeyer, Sofie Vogt, Clemens Petersen, Holger von Wenckstern, and Marius Grundmann
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