Dresden 2026 – wissenschaftliches Programm

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AKBP: Arbeitskreis Beschleunigerphysik

AKBP 9: RF Cavities I

AKBP 9.2: Vortrag

Mittwoch, 11. März 2026, 11:15–11:30, SCH/A117

Atomic layer deposition of silicon nitride as an insulator layer for use in multilayer coating of cavities — •Ana Katharina Steffens¹, Isabel Díaz-Palacio¹, Robert Zierold¹, Marc Wenskat², and Wolfgang Hillert¹ — ¹Universität Hamburg, Hamburg, Deutschland — ²Deutsches Elektronen Synchrotron (DESY), Hamburg, Deutschland

Multilayer coatings of superconducting cavities provide a strategic route to superconducting radio frequency surfaces engineered to surpass the performance limits of conventional bulk Nb. Particular attention is paid to SIS structures consisting of thin superconducting (S) and insulating layers (I), as these can prevent global vortex penetration and allowing for higher surface magnetic fields before the loss of the Meissner state. However, previous SIS structures consisting of Nb bulk, AlN, and NbTiN show diffusion of aluminum into the NbTiN layer upon annealing at high temperatures, compromising the SIS-performance. Herein, SiN is investigated as an alternative due to its greater thermal stability. Plasma-enhanced atomic layer deposition (PEALD) is used to deposit thin SiN and NbTiN layers, enabling controlled growth of homogeneous, conformal layers at low process temperatures. This study focuses on the development of a PEALD process for SiN and the characterization of various layer configurations, with initial results being presented.

Keywords: PEALD; silicon nitride; multilayer coatings; niobium titanium nitride; SRF cavity