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CPP: Fachverband Chemische Physik und Polymerphysik

CPP 46: Poster II

CPP 46.43: Poster

Donnerstag, 12. März 2026, 09:30–11:30, P5

Towards stable passivation layers on III-V-semiconductor nanowires for photoelectrochemical water splitting applications — •Chris Yannic Bohlemann, Pavithira Manoharan, Sahar Shekarabi, Peter Kleinschmidt, Thomas Hannappel, and Juliane Koch — Technische Universität Ilmenau, Fundermentals of Energy Materials, Ilmenau, Germany

The production of green hydrogen is expected to play a crucial role in achieving a sustainable, climate-neutral economy. Although III-V semiconductors offer record solar-to-hydrogen conversion efficiencies, the large-scale deployment is limited by the scarcity of the required materials. III-V nanowires (NWs) are a promising approach, as they require less material than planar films, and exhibit an enhanced optical absorption, as well as benefit from a high surface-to-volume ratio [1].

However, the instability of III-V materials in aqueous electrolytes leads to rapid corrosion and short lifetimes of photoelectrodes. To address this limitation, we investigated the growth behavior, electrical properties, and corrosion stability of GaAsP NWs and subsequently passivated with GaP(N) shells grown via metal-organic vapor-phase epitaxy. Scanning electron microscopy was used to examine the growth quality, crystal orientation, defect structures, and degradation before and after extended operation under water splitting conditions. Our results demonstrate that the application of a GaP(N) passivation layer significantly enhances the structural integrity and durability of the NWs during continuous photoelectrochemical water splitting.

[1] J. Koch et al., Adv. Energ. Sust. Res. e202500156, 2025.

Keywords: Nanowires; Watersplitting; Photoelectrochemistry (PEC); MOVPE; III-V Semiconductor