Dresden 2026 –
wissenschaftliches Programm
DS 11: Layer Deposition
Mittwoch, 11. März 2026, 09:30–11:45, REC/B214
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09:30 |
DS 11.1 |
Photo-Assisted Atomic Layer Deposition — •Paul Butler, Simon Wörle, Pengyu Hu, Manfred Stemplinger, and Ian D. Sharp
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09:45 |
DS 11.2 |
Epitaxial growth of wurtzite Al1−xHfxN thin films by reactive magnetron sputtering — •Valentin Walbrunn, Laura I. Wagner, Verena Streibel, Mingyun Yuan, and Ian D. Sharp
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10:00 |
DS 11.3 |
Epitaxial growth of hexagonal boron nitride (h-BN) by thermal laser epitaxy (TLE) — •Markus A. Blonski, Gideok Kim, João Marcelo Lopes, Audrey Gilbert, Lutz Geelhaar, Jochen Mannhart, Darrell G. Schlom, and Patrick Vogt
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10:15 |
DS 11.4 |
Local growth of GaAs on Si(001) and Si(001)4.5∘ by Laser-assisted MOVPE — •Christian Bruckmann, Jürgen Bläsing, Armin Dadgar, and André Strittmatter
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10:30 |
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15 min. break
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10:45 |
DS 11.5 |
Interface formation in ALD-based SnO2/CeOx heterostructures — •Dominic Guttmann, Rudi Tschammer, Carlos Morales, Malgorzata Kot, Michal Mazur, Damian Wojcieszak, Paulina Kapuscik, Wiktoria Kolodzinska, Jarosław Domaradzki, and Jan Ingo Flege
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11:00 |
DS 11.6 |
Enhancing the antiferroelectric response of AgNbO3 thin films — •Sreelakshmi Prasanna, Juliette Cardoletti, Philipp Komissinskiy, Thorsten Schneider, and Lambert Alff
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11:15 |
DS 11.7 |
The contribution has been withdrawn.
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11:30 |
DS 11.8 |
The contribution has been withdrawn.
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