Dresden 2026 – scientific programme

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DS: Fachverband Dünne Schichten

DS 11: Layer Deposition

DS 11.4: Talk

Wednesday, March 11, 2026, 10:15–10:30, REC/B214

Local growth of GaAs on Si(001) and Si(001)4.5^∘ by Laser-assisted MOVPE — •Christian Bruckmann, Jürgen Bläsing, Armin Dadgar, and André Strittmatter — Institute of Physics, Otto-von-Guericke-University Magdeburg, Germany

The demand for increasingly performant, energy-efficient semiconductor devices is driving the research on how to combine III/V- with Si-based components in the most efficient way possible. While the monolithic integration on the Si substrate offers advantages compared to hybrid integration schemes, the heteroepitaxy of III/V-compound semiconductors is challenging due to different material properties. The Laser-assisted MOVPE enables an additive fabrication of semiconductor devices allowing cost-efficient low-volume production of special device structures. Key part is a high-power laser diode used for local heating of the substrate surface leading to local growth. GaAs islands were grown on Si(100) as well as Si(100) 4.5 ^∘ substrates using a two-step growth approach which consists of a low-temperature nucleation layer followed by a high-temperature buffer layer. Optimization of the growth parameters and characterization with AFM and XRD shows qualitative trends similar to conventional MOVPE. For an island with a diameter of 260 nm and a height of 230 nm a XRD FWHM of 0.47 ^∘ (ω-Scan, GaAs(004)) was obtained. Increasing the layer thickness to 3 µm yields a FWHM of 0.26 ^∘ at optimum. Roughness measurements in the island center lead to RMS values of 4.0 nm (5 x 5 µm²).

Keywords: MOVPE; monolithic integration; GaAs; Si