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DS: Fachverband Dünne Schichten

DS 16: Thin Film Application

DS 16.3: Vortrag

Donnerstag, 12. März 2026, 10:00–10:15, REC/C213

Resistive Sensor for in situ electrical monitoring during atomic layer deposition — •Lucas Rave, Colin Schormann, Stefanie Haugg, Kristian Deneke, Jun Peng, Robert Blick, and Robert Zierold — Center for Hybrid Nanostructures, University of Hamburg, Germany

Atomic layer deposition (ALD) provides exceptional coating conformality with sub-nanometer resolution, driving the new semiconductor technology node processes. Conventional in situ diagnostics, such as spectroscopic ellipsometry and quartz crystal microbalances, focus on mass and optical morphology information during deposition. However, rich electrical information remains limited. To address this, we developed an electrical in situ monitoring detector capable of resolving resistance changes for individual precursor and purge pulses. This detector contains custom-patterned titanium electrodes on Si/SiO₂ substrates, whose resistance evolution directly reflects cycle-resolved ALD surface reactions. Using this approach, we probed the deposition process for oxides, including ZnO, Al-doped ZnO (AZO), and TiO₂, capturing characteristic signatures of nucleation delays, self-limiting ligand exchange, and dopant-induced conductivity changes. Our method reveals how different precursor chemistries manifest in distinct electrical transients and provides a quantitative link between surface reaction kinetics and film evolution. The resistance-based in situ sensing offers a practical, compact, and integrable diagnostic tool for understanding and optimizing ALD processes, enabling improved control over thin-film quality in micro- and nanofabrication.

Keywords: Atomic Layer Deposition (ALD); Resistive Sensor; In Situ Electrical Monitoring; Thin Film; Sensor