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DS: Fachverband Dünne Schichten
DS 16: Thin Film Application
DS 16.7: Vortrag
Donnerstag, 12. März 2026, 11:15–11:30, REC/C213
Gallium phosphide on insulator for integrated quantum photonics — •Tobias Bucher1, Otto Arnold1,2,3, Katsuya Tanaka1,2,3,4, Muyi Yang1,2,3,4, Carsten Ronning1, and Isabelle Staude1,2,3,4 — 1Institute of Solid-State Physics, Friedrich Schiller University Jena, 07743 Jena, Germany — 2Abbe Center of Photonics, Friedrich Schiller University Jena, 07745 Jena, Germany — 3Institute of Applied Physics, Friedrich Schiller University Jena, 07745 Jena, Germany — 4Max Planck School of Photonics, Germany
Gallium phosphide (GaP) emerges as a promising material for quantum nanophotonics due to its high refractive index with low absorption in the visible, combined with a strong second-order nonlinear response and the absence of linear birefringence. Growing high-quality, single-crystalline GaP thin films on low-index substrates, however, faces challenges due to lattice and thermal mismatch, and process complexity in common epitaxial methods. Here, we demonstrate ion slicing of GaP thin films and anodic bonding onto low-index glass substrates. We fabricate GaP thin films from (100) and (110) bulk crystals with thicknesses of 760 ± 40nm. Structural and optical characterisation is used to optimise the implantation and bonding conditions with the goal of achieving high-optical quality and low absorption suitable for nanophotonic applications.
Keywords: ion slicing; gallium phosphide; nonlinear metaoptics; quantum nanophotonics