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DS: Fachverband Dünne Schichten
DS 20: Poster
DS 20.18: Poster
Donnerstag, 12. März 2026, 18:30–20:30, P2
Single-crystalline Ni thin films as templates for epitaxial growth of 2D materials — •Paula Vierck, Audrey Gilbert, Domenik Spallek, Jonas Lähnemann, and J. Marcelo J. Lopes — Paul-Drude-Institut für Festkörperelektronik, Leibniz-Institut im Forschungsverbund Berlin e.V., Berlin, Germany
Hexagonal boron nitride (h-BN) offers multiple interesting applications as a component in heterostructures with other 2D materials, for example as a passivation layer or a tunnel barrier in electronics. However, the synthesis of large-scale high quality h-BN required for such applications remains challenging, and the vast majority of the van der Waals heterostructures having h-BN as a building block are still prepared using mechanically exfoliated h-BN flakes.
To serve as a substrate for large-scale h-BN grown by molecular beam epitaxy (MBE), in this work, we investigate the synthesis of Ni films on Al2O3(0001) and MgO(111) using magnetron sputtering. The structure and morphology of the Ni films is characterized using X-ray diffraction (XRD), atomic force microscopy (AFM) and electron backscatter diffraction (EBSD). The structural quality of the Ni films is improved by systematically varying experimental parameters such as substrate temperature, sputtering power, film thickness and the post-growth annealing temperature, finally resulting in single crystalline Ni films with (111) orientation only.
Keywords: MBE; metal thin films; h-BN; vdW heterostructures