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DS: Fachverband Dünne Schichten
DS 20: Poster
DS 20.21: Poster
Thursday, March 12, 2026, 18:30–20:30, P2
InAsP quantum emitters on InP with single-photon emission from O- to C-band up to 80 K — •Yiteng Zhang1, Doaa Abdelbarey1, Markus Etzkorn2, Zenghui Jiang1, Ankita Choudhary1, Tom Fandrich1, Arijit Chakraborty1, Chenxi Ma1, Pengji Li1, Xin Cao1, Eddy P. Rugeramigabo1, Michael Zopf1,3, and Fei Ding1,3 — 1Leibniz University Hannover, Institute of Solid State Physics, Appelstraße 2, 30167 Hannover, Germany — 2Technische Universität Braunschweig, Laboratory for Emerging Nanometrology (LENA), Langer Kamp 6a, 38106 Braunschweig, Germany — 3Leibniz University Hannover, Laboratory of Nano and Quantum Engineering, Schneiderberg 39, 30167 Hannover, Germany
We grow InAsP nanostructures on InP(001) by high-temperature annealing under arsenic flux followed by controlled cooling. In situ RHEED and ex situ AFM/TEM show that this sequence produces coherent, compositionally graded InAsP islands. Low-temperature micro-photoluminescence reveals spectrally isolated emission lines from individual emitters covering the telecom O- to C-bands; power dependence and second-order correlations under continuous-wave excitation show excitonic behaviour and clear antibunching with g2(0)<0.1, confirming single-photon emission. Temperature-dependent measurements indicate that single-photon emission persists up to temperatures above 80K.
Keywords: InAsP; telecom quantum dots; single photon source; MBE