Parts | Days | Selection | Search | Updates | Downloads | Help

DS: Fachverband Dünne Schichten

DS 20: Poster

DS 20.28: Poster

Thursday, March 12, 2026, 18:30–20:30, P2

Towards Low-Temperature ALD of Topological Insulator Sb₂Te₃ — •Luise Merkwitz^1,2, Paul Pöhler^1,2, Steffen Ziller¹, Knut Ulbrich¹, Marek Ulbrich¹, Sebastian Lehmann¹, and Kornelius Nielsch^1,2 — ¹Institute for Metallic Materials, Leibniz Institute for Solid State and Materials Research, IFW Dresden, D-01069 Dresden, Germany — ²Technical University Dresden, D-01069 Dresden, Germany

Low-Temperature ALD expands the range of applications for ALD enabling not only the deposition of thin films on temperature-sensitive substrates but also the possibility of a more ressoure-efficient setup and reaching advantages in material conformity and less sample defects.

We have designed, constructed and developed a state-of-the-art Low-Temperature ALD reactor for high-quality thin films. Our previous results demonstrate the technical functionality and reproducibility of known Low-Temperature ALD processes. In addition, our latest results reveal a never before published Sb₂Te₃ synthesis which we consider to be a highly promising Room-Temperature ALD process.